N-channel power MOSFET featuring 100V drain-source breakdown voltage and a low 8mΩ typical drain-source on-resistance. This through-hole component, housed in a TO-220FP package, offers a continuous drain current of 45A and a maximum power dissipation of 30W. Designed for efficient switching, it exhibits a fall time of 15ns and turn-on delay of 27ns. Operating across a wide temperature range from -55°C to 175°C, this RoHS compliant MOSFET is suitable for demanding applications.
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Stmicroelectronics STF100N10F7 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 45A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 8mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 80mR |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 16.4mm |
| Input Capacitance | 4.369nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 30W |
| Radiation Hardening | No |
| Rds On Max | 8mR |
| RoHS Compliant | Yes |
| Series | DeepGATE™, STripFET™ VII |
| Turn-Off Delay Time | 46ns |
| Turn-On Delay Time | 27ns |
| Width | 4.6mm |
| RoHS | Compliant |
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