N-channel power MOSFET featuring 100V drain-source breakdown voltage and a low 8mΩ typical drain-source on-resistance. This through-hole component, housed in a TO-220FP package, offers a continuous drain current of 45A and a maximum power dissipation of 30W. Designed for efficient switching, it exhibits a fall time of 15ns and turn-on delay of 27ns. Operating across a wide temperature range from -55°C to 175°C, this RoHS compliant MOSFET is suitable for demanding applications.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power30W
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Technical Specifications
Stmicroelectronics STF100N10F7 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
45A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
8mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
80mR
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
16.4mm
Input Capacitance
4.369nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
30W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
30W
Radiation Hardening
No
Rds On Max
8mR
RoHS Compliant
Yes
Series
DeepGATE™, STripFET™ VII
Turn-Off Delay Time
46ns
Turn-On Delay Time
27ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF100N10F7 Datasheet
Download the complete datasheet for Stmicroelectronics STF100N10F7 to view detailed technical specifications.
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