N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 7.5A continuous drain current. This through-hole component offers a low 0.55 Ohm typical drain-source resistance, with a maximum of 0.60 Ohm. Designed for high-efficiency switching, it operates within a temperature range of -55°C to 150°C and is housed in a TO-220FP package. Key switching parameters include a 13.2ns fall time, 8.8ns turn-on delay, and 32.5ns turn-off delay.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STF10N60M2 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
7.5A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
560mR
Drain to Source Voltage (Vdss)
600V
Fall Time
13.2ns
Gate to Source Voltage (Vgs)
25V
Height
16.4mm
Input Capacitance
400pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Through Hole
Number of Channels
1
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
600mR
RoHS Compliant
Yes
Series
MDmesh™ II Plus
Turn-Off Delay Time
32.5ns
Turn-On Delay Time
8.8ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF10N60M2 Datasheet
Download the complete datasheet for Stmicroelectronics STF10N60M2 to view detailed technical specifications.
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