N-channel SuperMESH3™ power MOSFET featuring 650V drain-to-source breakdown voltage and 10A continuous drain current. This through-hole component offers a low 0.75 Ohm typical drain-to-source resistance and 35W power dissipation. Designed for demanding applications, it operates within a -55°C to 150°C temperature range and includes Zener protection. The TO-220FP package facilitates easy integration.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power35W
Quick Jump:
Technical Specifications
Stmicroelectronics STF10N65K3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
10A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
750mR
Drain to Source Voltage (Vdss)
650V
Fall Time
35ns
Gate to Source Voltage (Vgs)
30V
Height
16.4mm
Input Capacitance
1.18nF
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
35W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
35W
Radiation Hardening
No
Rds On Max
1R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH3™
Threshold Voltage
3V
Turn-Off Delay Time
44ns
Turn-On Delay Time
14.5ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF10N65K3 Datasheet
Download the complete datasheet for Stmicroelectronics STF10N65K3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
