N-channel SuperMESH3™ power MOSFET featuring 650V drain-to-source breakdown voltage and 10A continuous drain current. This through-hole component offers a low 0.75 Ohm typical drain-to-source resistance and 35W power dissipation. Designed for demanding applications, it operates within a -55°C to 150°C temperature range and includes Zener protection. The TO-220FP package facilitates easy integration.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power35W
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Technical Specifications
Stmicroelectronics STF10N65K3 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 750mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.4mm |
| Input Capacitance | 1.18nF |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 35W |
| Radiation Hardening | No |
| Rds On Max | 1R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH3™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 44ns |
| Turn-On Delay Time | 14.5ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STF10N65K3 Datasheet
Download the complete datasheet for Stmicroelectronics STF10N65K3 to view detailed technical specifications.
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