N-channel power MOSFET featuring 500V drain-source breakdown voltage and 7A continuous drain current. Offers a low 630mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-220-3 package, this component boasts fast switching speeds with typical turn-on and turn-off delay times of 7.8ns and a fall time of 12ns. Maximum power dissipation is rated at 25W, with an operating temperature range of -55°C to 150°C. RoHS compliant.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power25W
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Technical Specifications
Stmicroelectronics STF10NM50N technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
7A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
630mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
630MR
Fall Time
12ns
Gate to Source Voltage (Vgs)
25V
Height
16.4mm
Input Capacitance
450pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
25W
Radiation Hardening
No
Rds On Max
630mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™ II
Threshold Voltage
3V
Turn-Off Delay Time
7.8ns
Turn-On Delay Time
7.8ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF10NM50N Datasheet
Download the complete datasheet for Stmicroelectronics STF10NM50N to view detailed technical specifications.
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