N-channel Power MOSFET featuring 600V drain-source voltage and 10A continuous drain current. This through-hole component offers a low 0.53 Ohm typical on-resistance and 550mR max. With a 3V threshold voltage and fast switching times including 10ns turn-on delay and 15ns fall time, it is suitable for demanding applications. Packaged in TO-220-3, it operates from -55°C to 150°C and has a maximum power dissipation of 25W.
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STF10NM60N technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 16.4mm |
| Input Capacitance | 540pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Rds On Max | 550mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 10ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STF10NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STF10NM60N to view detailed technical specifications.
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