N-channel Power MOSFET featuring 600V drain-source voltage and 10A continuous drain current. This through-hole component offers a low 0.53 Ohm typical on-resistance and 550mR max. With a 3V threshold voltage and fast switching times including 10ns turn-on delay and 15ns fall time, it is suitable for demanding applications. Packaged in TO-220-3, it operates from -55°C to 150°C and has a maximum power dissipation of 25W.
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STF10NM60N technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
10A
Drain to Source Voltage (Vdss)
600V
Fall Time
15ns
Gate to Source Voltage (Vgs)
25V
Height
16.4mm
Input Capacitance
540pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Radiation Hardening
No
Rds On Max
550mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™
Threshold Voltage
3V
Turn-Off Delay Time
32ns
Turn-On Delay Time
10ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF10NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STF10NM60N to view detailed technical specifications.
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