
N-channel Power MOSFET featuring 600V drain-source voltage and 8A continuous drain current. Offers a low 550mR maximum drain-source on-resistance and 25W power dissipation. This TO-220FP packaged component boasts fast switching speeds with a 9.8ns fall time and 9.2ns turn-on delay. Operating from -55°C to 150°C, it is RoHS compliant and utilizes FDmesh™ II technology.
Stmicroelectronics STF10NM60ND technical specifications.
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