N-channel Power MOSFET featuring 600V drain-source voltage and 8A continuous drain current. Offers a low 550mR maximum drain-source on-resistance and 25W power dissipation. This TO-220FP packaged component boasts fast switching speeds with a 9.8ns fall time and 9.2ns turn-on delay. Operating from -55°C to 150°C, it is RoHS compliant and utilizes FDmesh™ II technology.
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Stmicroelectronics STF10NM60ND technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 550MR |
| Fall Time | 9.8ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 16.4mm |
| Input Capacitance | 540pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 25W |
| Radiation Hardening | No |
| Rds On Max | 550mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | FDmesh™ II |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 9.2ns |
| Width | 4.6mm |
| RoHS | Compliant |
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