N-channel Power MOSFET featuring 600V drain-source voltage and 8A continuous drain current. Offers a low 550mR maximum drain-source on-resistance and 25W power dissipation. This TO-220FP packaged component boasts fast switching speeds with a 9.8ns fall time and 9.2ns turn-on delay. Operating from -55°C to 150°C, it is RoHS compliant and utilizes FDmesh™ II technology.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power25W
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Technical Specifications
Stmicroelectronics STF10NM60ND technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
8A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
600mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
550MR
Fall Time
9.8ns
Gate to Source Voltage (Vgs)
25V
Height
16.4mm
Input Capacitance
540pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
25W
Radiation Hardening
No
Rds On Max
550mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
FDmesh™ II
Threshold Voltage
4V
Turn-Off Delay Time
32ns
Turn-On Delay Time
9.2ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF10NM60ND Datasheet
Download the complete datasheet for Stmicroelectronics STF10NM60ND to view detailed technical specifications.
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