N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 9A continuous drain current. This component offers a low 0.43 Ohm typical drain-source on-resistance (Rds On) and is housed in a TO-220-3 through-hole package. With a maximum power dissipation of 25W and operating temperatures from -55°C to 150°C, it is RoHS compliant and lead-free. Key electrical characteristics include 644pF input capacitance and 23ns turn-on/turn-off delay times.
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Stmicroelectronics STF11N65M5 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 480mR |
| Drain to Source Voltage (Vdss) | 650V |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 16.4mm |
| Input Capacitance | 644pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 85W |
| Radiation Hardening | No |
| Rds On Max | 480mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 23ns |
| Width | 4.6mm |
| RoHS | Compliant |
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