N-channel Power MOSFET featuring 600V drain-source voltage and 11A continuous drain current. Offers 380mΩ typical drain-source resistance and 25W power dissipation. Designed for through-hole mounting in a TO-220FP package, with fast switching characteristics including 9.5ns fall time and 11ns turn-on delay. Operates across a wide temperature range from -55°C to 150°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power25W
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Technical Specifications
Stmicroelectronics STF13N60M2 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 380mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 9.5ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 16.4mm |
| Input Capacitance | 580pF |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 25W |
| Radiation Hardening | No |
| Rds On Max | 380mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II Plus |
| Turn-Off Delay Time | 41ns |
| Turn-On Delay Time | 11ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STF13N60M2 Datasheet
Download the complete datasheet for Stmicroelectronics STF13N60M2 to view detailed technical specifications.
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