N-channel Power MOSFET featuring 600V drain-source voltage and 11A continuous drain current. Offers 380mΩ typical drain-source resistance and 25W power dissipation. Designed for through-hole mounting in a TO-220FP package, with fast switching characteristics including 9.5ns fall time and 11ns turn-on delay. Operates across a wide temperature range from -55°C to 150°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power25W
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Technical Specifications
Stmicroelectronics STF13N60M2 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
11A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
380mR
Drain to Source Voltage (Vdss)
600V
Fall Time
9.5ns
Gate to Source Voltage (Vgs)
25V
Height
16.4mm
Input Capacitance
580pF
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
25W
Radiation Hardening
No
Rds On Max
380mR
RoHS Compliant
Yes
Series
MDmesh™ II Plus
Turn-Off Delay Time
41ns
Turn-On Delay Time
11ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF13N60M2 Datasheet
Download the complete datasheet for Stmicroelectronics STF13N60M2 to view detailed technical specifications.
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