N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 11A continuous drain current. Offers a low 280 mOhm typical drain-source on-resistance. Designed with a TO-220-3 through-hole package, this component boasts fast switching characteristics with a 3ns turn-on delay and 10ns fall time. Maximum power dissipation is rated at 25W, with operating temperatures ranging from -55°C to 150°C. RoHS compliant and lead-free.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power25W
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Technical Specifications
Stmicroelectronics STF13NM60N technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
11A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
360mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
280mR
Fall Time
10ns
Gate to Source Voltage (Vgs)
25V
Height
16.4mm
Input Capacitance
790pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Through Hole
Nominal Vgs
3V
Number of Elements
1
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
25W
Radiation Hardening
No
Rds On Max
360mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™ II
Turn-Off Delay Time
30ns
Turn-On Delay Time
3ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF13NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STF13NM60N to view detailed technical specifications.
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