N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 11A continuous drain current. Offers a low 280 mOhm typical drain-source on-resistance. Designed with a TO-220-3 through-hole package, this component boasts fast switching characteristics with a 3ns turn-on delay and 10ns fall time. Maximum power dissipation is rated at 25W, with operating temperatures ranging from -55°C to 150°C. RoHS compliant and lead-free.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power25W
Quick Jump:
Technical Specifications
Stmicroelectronics STF13NM60N technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 360mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 280mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 16.4mm |
| Input Capacitance | 790pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Nominal Vgs | 3V |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 25W |
| Radiation Hardening | No |
| Rds On Max | 360mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 3ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STF13NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STF13NM60N to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
