
N-channel Power MOSFET featuring 600V drain-source voltage and 11A continuous drain current. This single-element transistor utilizes MDmesh process technology and offers a low 360mOhm maximum drain-source resistance at 10V. Packaged in a 3-pin TO-220FP (Fullpak) with through-hole mounting, it has a typical gate charge of 30nC and input capacitance of 790pF. Operating temperature range is -55°C to 150°C.
Stmicroelectronics STF13NM60N-H technical specifications.
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