N-channel Power MOSFET featuring 600V drain-source voltage and 11A continuous drain current. This single-element transistor utilizes MDmesh process technology and offers a low 360mOhm maximum drain-source resistance at 10V. Packaged in a 3-pin TO-220FP (Fullpak) with through-hole mounting, it has a typical gate charge of 30nC and input capacitance of 790pF. Operating temperature range is -55°C to 150°C.
PackageTO-220FP
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STF13NM60N-H technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220FP
Package Description
Transistor Outline Package Fullpak
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.4(Max)
Package Width (mm)
4.6(Max)
Package Height (mm)
16.4(Max)
Seated Plane Height (mm)
20(Max)
Pin Pitch (mm)
2.7(Max)
Package Weight (g)
2.04
Package Material
Plastic
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
MDmesh
Maximum Drain Source Voltage
600V
Maximum Gate Source Voltage
±25V
Maximum Continuous Drain Current
11A
Maximum Drain Source Resistance
360@10VmOhm
Typical Gate Charge @ Vgs
30@10VnC
Typical Gate Charge @ 10V
30nC
Typical Input Capacitance @ Vds
790@50VpF
Maximum Power Dissipation
25000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SCR76
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Stmicroelectronics STF13NM60N-H Datasheet
Download the complete datasheet for Stmicroelectronics STF13NM60N-H to view detailed technical specifications.
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