N-channel Power MOSFET featuring 600V drain-source voltage and 11A continuous drain current. This through-hole component offers a low 0.32 Ohm typical drain-source resistance and a fast integrated diode. Packaged in TO-220FP, it operates from -55°C to 150°C with a maximum power dissipation of 25W. Key switching characteristics include a 15.4ns fall time and 9.6ns turn-off delay.
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Stmicroelectronics STF13NM60ND technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 380mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 15.4ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 16.4mm |
| Input Capacitance | 845pF |
| Length | 10.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 25W |
| Radiation Hardening | No |
| Rds On Max | 380mR |
| RoHS Compliant | Yes |
| Series | FDmesh™ II |
| Turn-Off Delay Time | 9.6ns |
| Turn-On Delay Time | 46.5ns |
| Width | 4.6mm |
| RoHS | Compliant |
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