N-channel Power MOSFET featuring 950V drain-to-source breakdown voltage and 12A continuous drain current. Offers 410mΩ typical drain-to-source resistance at 25°C. Designed for through-hole mounting in a TO-220FP package, with a maximum power dissipation of 30W and an operating temperature range of -55°C to 150°C. Includes 20ns turn-on and 62ns turn-off delay times, with 900pF input capacitance. RoHS compliant and lead-free.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STF15N95K5 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
12A
Drain to Source Breakdown Voltage
950V
Drain to Source Resistance
410mR
Drain to Source Voltage (Vdss)
950V
Gate to Source Voltage (Vgs)
30V
Height
16.4mm
Input Capacitance
900pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
30W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
500mR
RoHS Compliant
Yes
Series
SuperMESH5™
Turn-Off Delay Time
62ns
Turn-On Delay Time
20ns
Weight
0.01164oz
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF15N95K5 Datasheet
Download the complete datasheet for Stmicroelectronics STF15N95K5 to view detailed technical specifications.
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