N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 12A continuous drain current. Offers a typical drain-source on-resistance of 0.35 Ohm and a maximum of 380mR. Designed for through-hole mounting in a TO-220-3 package, this component operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 35W. Key switching characteristics include a fall time of 26ns and turn-off delay of 14ns.
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Stmicroelectronics STF15NM65N technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 270mR |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 380MR |
| Fall Time | 26ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 16.4mm |
| Input Capacitance | 983pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 35W |
| Radiation Hardening | No |
| Rds On Max | 380mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 55.5ns |
| Width | 4.6mm |
| RoHS | Compliant |
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