N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 12A continuous drain current. Offers a typical drain-source on-resistance of 0.35 Ohm and a maximum of 380mR. Designed for through-hole mounting in a TO-220-3 package, this component operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 35W. Key switching characteristics include a fall time of 26ns and turn-off delay of 14ns.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power35W
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Technical Specifications
Stmicroelectronics STF15NM65N technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
12A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
270mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
380MR
Fall Time
26ns
Gate to Source Voltage (Vgs)
25V
Height
16.4mm
Input Capacitance
983pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
30W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
35W
Radiation Hardening
No
Rds On Max
380mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™
Threshold Voltage
3V
Turn-Off Delay Time
14ns
Turn-On Delay Time
55.5ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF15NM65N Datasheet
Download the complete datasheet for Stmicroelectronics STF15NM65N to view detailed technical specifications.
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