N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 12A continuous drain current. Offers low on-resistance with a maximum of 299mΩ at a 4V threshold voltage. Designed for through-hole mounting in a TO-220-3 package, this component boasts fast switching speeds with a 7ns fall time. Maximum power dissipation is 25W, operating across a temperature range of -55°C to 150°C.
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Stmicroelectronics STF16N65M5 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 299mR |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 279mR |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 9.3mm |
| Input Capacitance | 1.25nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 25W |
| Radiation Hardening | No |
| Rds On Max | 299mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 25ns |
| Width | 4.6mm |
| RoHS | Compliant |
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