N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 12A continuous drain current. Offers low on-resistance with a maximum of 299mΩ at a 4V threshold voltage. Designed for through-hole mounting in a TO-220-3 package, this component boasts fast switching speeds with a 7ns fall time. Maximum power dissipation is 25W, operating across a temperature range of -55°C to 150°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power25W
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Technical Specifications
Stmicroelectronics STF16N65M5 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
12A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
299mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
279mR
Fall Time
7ns
Gate to Source Voltage (Vgs)
25V
Height
9.3mm
Input Capacitance
1.25nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Through Hole
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
25W
Radiation Hardening
No
Rds On Max
299mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™ V
Threshold Voltage
4V
Turn-Off Delay Time
30ns
Turn-On Delay Time
25ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF16N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STF16N65M5 to view detailed technical specifications.
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