N-channel Power MOSFET featuring 600V drain-source voltage and 13A continuous drain current. Offers low 260mΩ typical drain-source on-resistance and 285mΩ maximum. Operates within a -55°C to 150°C temperature range with 30W power dissipation. Packaged in TO-220-3 for through-hole mounting, this RoHS compliant component is ideal for high-voltage switching applications.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power30W
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Technical Specifications
Stmicroelectronics STF18NM60N technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 260mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 285MR |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 16.4mm |
| Input Capacitance | 1nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 30W |
| Radiation Hardening | No |
| Rds On Max | 285mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 12ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STF18NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STF18NM60N to view detailed technical specifications.
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