N-channel Power MOSFET featuring 600V drain-source voltage and 13A continuous drain current. Offers low 260mΩ typical drain-source on-resistance and 285mΩ maximum. Operates within a -55°C to 150°C temperature range with 30W power dissipation. Packaged in TO-220-3 for through-hole mounting, this RoHS compliant component is ideal for high-voltage switching applications.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power30W
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Technical Specifications
Stmicroelectronics STF18NM60N technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
13A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
260mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
285MR
Fall Time
40ns
Gate to Source Voltage (Vgs)
25V
Height
16.4mm
Input Capacitance
1nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
30W
Mount
Through Hole
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
30W
Radiation Hardening
No
Rds On Max
285mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™ II
Threshold Voltage
3V
Turn-Off Delay Time
50ns
Turn-On Delay Time
12ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF18NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STF18NM60N to view detailed technical specifications.
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