N-channel Power MOSFET featuring 600V drain-source voltage and 13A continuous drain current. Offers low 0.25 Ohm typical drain-source on-resistance and a fast intrinsic diode. Packaged in a TO-220FP (3-pin) through-hole mount, this component operates from -55°C to 150°C with a maximum power dissipation of 30W. Key switching parameters include an 18ns fall time, 13ns turn-off delay, and 55ns turn-on delay.
Stmicroelectronics STF18NM60ND technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 290mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 16.4mm |
| Input Capacitance | 1.03nF |
| Length | 10.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 290mR |
| RoHS Compliant | Yes |
| Series | FDmesh™ II |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 55ns |
| Width | 4.6mm |
| RoHS | Compliant |
No datasheet is available for this part.
