N-channel power MOSFET featuring 800V drain-to-source breakdown voltage and 17A continuous drain current. Offers low on-resistance with a maximum of 295mΩ at 10Vgs. Designed for through-hole mounting in a TO-220FP package, this component boasts a maximum power dissipation of 40W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 18ns turn-on delay and 50ns fall time.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power40W
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Technical Specifications
Stmicroelectronics STF18NM80 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
17A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
250mR
Drain to Source Voltage (Vdss)
800V
Fall Time
50ns
Gate to Source Voltage (Vgs)
30V
Height
16.4mm
Input Capacitance
2.07nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
40W
Mount
Through Hole
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
40W
Radiation Hardening
No
Rds On Max
295mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™
Threshold Voltage
4V
Turn-Off Delay Time
96ns
Turn-On Delay Time
18ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF18NM80 Datasheet
Download the complete datasheet for Stmicroelectronics STF18NM80 to view detailed technical specifications.
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