N-channel Power MOSFET featuring 200V drain-source breakdown voltage and 11A continuous drain current. This through-hole component offers a low 0.11 Ohm typical drain-source on-resistance and 25W maximum power dissipation. Designed with MESH OVERLAY™ technology, it operates within a -55°C to 150°C temperature range and is housed in a TO-220FP package. Key switching characteristics include an 11ns fall time and 11.5ns turn-on delay time.
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| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 16.4mm |
| Input Capacitance | 800pF |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 25W |
| Radiation Hardening | No |
| Rds On Max | 160mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MESH OVERLAY™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 11.5ns |
| Width | 4.6mm |
| RoHS | Compliant |
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