N-channel Power MOSFET featuring 200V drain-source breakdown voltage and 11A continuous drain current. This through-hole component offers a low 0.11 Ohm typical drain-source on-resistance and 25W maximum power dissipation. Designed with MESH OVERLAY™ technology, it operates within a -55°C to 150°C temperature range and is housed in a TO-220FP package. Key switching characteristics include an 11ns fall time and 11.5ns turn-on delay time.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power25W
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Technical Specifications
Stmicroelectronics STF19NF20 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
15A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
160mR
Drain to Source Voltage (Vdss)
200V
Fall Time
11ns
Gate to Source Voltage (Vgs)
20V
Height
16.4mm
Input Capacitance
800pF
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
25W
Radiation Hardening
No
Rds On Max
160mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MESH OVERLAY™
Threshold Voltage
3V
Turn-Off Delay Time
19ns
Turn-On Delay Time
11.5ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF19NF20 Datasheet
Download the complete datasheet for Stmicroelectronics STF19NF20 to view detailed technical specifications.
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