N-CHANNEL POWER MOSFET featuring 200V drain-source breakdown voltage and 18A continuous drain current. This through-hole component offers a low 125mΩ Rds On resistance and 25W power dissipation. Key switching characteristics include a 15ns turn-on delay and 10ns fall time. Designed for demanding applications, it operates across a -55°C to 150°C temperature range and is available in TO-220AB and TO-220FP packages.
Stmicroelectronics STF20N20 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 18A |
| Current Rating | 18A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 125mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 940pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 25W |
| Radiation Hardening | No |
| Rds On Max | 125mR |
| RoHS Compliant | Yes |
| Series | STripFET™ II |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 200V |
| RoHS | Compliant |
No datasheet is available for this part.
