N-CHANNEL POWER MOSFET featuring 200V drain-source breakdown voltage and 18A continuous drain current. This through-hole component offers a low 125mΩ Rds On resistance and 25W power dissipation. Key switching characteristics include a 15ns turn-on delay and 10ns fall time. Designed for demanding applications, it operates across a -55°C to 150°C temperature range and is available in TO-220AB and TO-220FP packages.
PackageTO-220-3
Current Rating18A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STF20N20 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
18A
Current Rating
18A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
125mR
Drain to Source Voltage (Vdss)
200V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
940pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Through Hole
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
25W
Radiation Hardening
No
Rds On Max
125mR
RoHS Compliant
Yes
Series
STripFET™ II
Turn-Off Delay Time
40ns
Turn-On Delay Time
15ns
DC Rated Voltage
200V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF20N20 Datasheet
Download the complete datasheet for Stmicroelectronics STF20N20 to view detailed technical specifications.
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