
N-CHANNEL POWER MOSFET featuring 200V drain-source breakdown voltage and 18A continuous drain current. This through-hole component offers a low 125mΩ Rds On resistance and 25W power dissipation. Key switching characteristics include a 15ns turn-on delay and 10ns fall time. Designed for demanding applications, it operates across a -55°C to 150°C temperature range and is available in TO-220AB and TO-220FP packages.
Stmicroelectronics STF20N20 technical specifications.
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