N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 18A continuous drain current. Offers low 0.160 Ohm typical drain-source resistance and 190mR maximum Rds On. Designed for through-hole mounting in a TO-220-3 package, this device boasts fast switching characteristics with a 7.5ns fall time. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 130W.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power130W
Quick Jump:
Technical Specifications
Stmicroelectronics STF20N65M5 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
18A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
190mR
Drain to Source Voltage (Vdss)
650V
Fall Time
7.5ns
Gate to Source Voltage (Vgs)
25V
Height
16.4mm
Input Capacitance
1.345nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
30W
Mount
Through Hole
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
130W
Radiation Hardening
No
Rds On Max
190mR
RoHS Compliant
Yes
Series
MDmesh™ V
Turn-Off Delay Time
11.5ns
Turn-On Delay Time
43ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF20N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STF20N65M5 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
