N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 18A continuous drain current. Offers low 0.160 Ohm typical drain-source resistance and 190mR maximum Rds On. Designed for through-hole mounting in a TO-220-3 package, this device boasts fast switching characteristics with a 7.5ns fall time. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 130W.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power130W
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Technical Specifications
Stmicroelectronics STF20N65M5 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 190mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 7.5ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 16.4mm |
| Input Capacitance | 1.345nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 130W |
| Radiation Hardening | No |
| Rds On Max | 190mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
| Turn-Off Delay Time | 11.5ns |
| Turn-On Delay Time | 43ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STF20N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STF20N65M5 to view detailed technical specifications.
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