N-channel Power MOSFET, 950V Drain to Source Breakdown Voltage, 17.5A Continuous Drain Current, and 330mR maximum Drain-source On Resistance. Features a TO-220-3 package for through-hole mounting, with a maximum power dissipation of 40W. Operates from -55°C to 150°C, with typical fall time of 20ns and turn-on delay of 17ns. RoHS compliant and lead-free.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power40W
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Technical Specifications
Stmicroelectronics STF20N95K5 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 17.5A |
| Drain to Source Breakdown Voltage | 950V |
| Drain to Source Resistance | 330mR |
| Drain to Source Voltage (Vdss) | 950V |
| Drain-source On Resistance-Max | 330MR |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| Rds On Max | 330mR |
| RoHS Compliant | Yes |
| Series | SuperMESH5™ |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 17ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STF20N95K5 Datasheet
Download the complete datasheet for Stmicroelectronics STF20N95K5 to view detailed technical specifications.
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