N-channel Power MOSFET, 950V Drain to Source Breakdown Voltage, 17.5A Continuous Drain Current, and 330mR maximum Drain-source On Resistance. Features a TO-220-3 package for through-hole mounting, with a maximum power dissipation of 40W. Operates from -55°C to 150°C, with typical fall time of 20ns and turn-on delay of 17ns. RoHS compliant and lead-free.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power40W
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Technical Specifications
Stmicroelectronics STF20N95K5 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
17.5A
Drain to Source Breakdown Voltage
950V
Drain to Source Resistance
330mR
Drain to Source Voltage (Vdss)
950V
Drain-source On Resistance-Max
330MR
Fall Time
20ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
1.5nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
40W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
40W
Radiation Hardening
No
Rds On Max
330mR
RoHS Compliant
Yes
Series
SuperMESH5™
Turn-Off Delay Time
70ns
Turn-On Delay Time
17ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF20N95K5 Datasheet
Download the complete datasheet for Stmicroelectronics STF20N95K5 to view detailed technical specifications.
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