
N-channel power MOSFET featuring 60V drain-source breakdown voltage and 20A continuous drain current. Offers a low 70mΩ Rds On resistance for efficient power switching. Designed for through-hole mounting in a TO-220-3 package, this RoHS compliant component operates across a wide temperature range of -55°C to 175°C. Key switching characteristics include a 5ns turn-on delay and 5ns fall time.
Stmicroelectronics STF20NF06 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 20A |
| Current Rating | 20A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 70mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 400pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 28W |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 60W |
| Radiation Hardening | No |
| Rds On Max | 70mR |
| RoHS Compliant | Yes |
| Series | STripFET™ II |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 5ns |
| DC Rated Voltage | 60V |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STF20NF06 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
