N-channel power MOSFET featuring 200V drain-source breakdown voltage and 18A continuous drain current. This through-hole component offers a low 0.10 Ohm typical drain-source on-resistance and a maximum of 125mR. Designed for efficient switching with fast turn-on (15ns) and turn-off (40ns) delay times, it operates within a -55°C to 175°C temperature range and has a 30W power dissipation. Packaged in a TO-220FP format, this RoHS compliant device is ideal for power management applications.
PackageTO-220-3
Current Rating18A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STF20NF20 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
18A
Current Rating
18A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
125mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
100mR
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
16.4mm
Input Capacitance
940pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
30W
Mount
Through Hole
Number of Elements
1
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
30W
Radiation Hardening
No
Rds On Max
125mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™
Threshold Voltage
3V
Turn-Off Delay Time
40ns
Turn-On Delay Time
15ns
DC Rated Voltage
200V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF20NF20 Datasheet
Download the complete datasheet for Stmicroelectronics STF20NF20 to view detailed technical specifications.
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