N-channel enhancement mode power MOSFET featuring 900V maximum drain-source voltage and 18.5A continuous drain current. This single-element transistor offers a low 299mOhm maximum drain-source resistance at 10V gate-source voltage. Housed in a 3-pin TO-220FP package with a tab, it supports through-hole mounting and operates within a -55°C to 150°C temperature range. Key electrical characteristics include a typical gate charge of 43nC and input capacitance of 1645pF.
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Stmicroelectronics STF21N90K5 technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220FP |
| Package Description | Transistor Outline Package Fullpak |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.4(Max) |
| Package Width (mm) | 4.6(Max) |
| Package Height (mm) | 16.4(Max) |
| Seated Plane Height (mm) | 20(Max) |
| Pin Pitch (mm) | 2.7(Max) |
| Package Weight (g) | 2.04 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 900V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 18.5A |
| Maximum Drain Source Resistance | 299@10VmOhm |
| Typical Gate Charge @ Vgs | 43@10VnC |
| Typical Gate Charge @ 10V | 43nC |
| Typical Input Capacitance @ Vds | 1645@100VpF |
| Maximum Power Dissipation | 40000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | SCR76 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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