N-channel enhancement mode power MOSFET featuring 900V maximum drain-source voltage and 18.5A continuous drain current. This single-element transistor offers a low 299mOhm maximum drain-source resistance at 10V gate-source voltage. Housed in a 3-pin TO-220FP package with a tab, it supports through-hole mounting and operates within a -55°C to 150°C temperature range. Key electrical characteristics include a typical gate charge of 43nC and input capacitance of 1645pF.
PackageTO-220FP
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STF21N90K5 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220FP
Package Description
Transistor Outline Package Fullpak
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.4(Max)
Package Width (mm)
4.6(Max)
Package Height (mm)
16.4(Max)
Seated Plane Height (mm)
20(Max)
Pin Pitch (mm)
2.7(Max)
Package Weight (g)
2.04
Package Material
Plastic
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
900V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
18.5A
Maximum Drain Source Resistance
299@10VmOhm
Typical Gate Charge @ Vgs
43@10VnC
Typical Gate Charge @ 10V
43nC
Typical Input Capacitance @ Vds
1645@100VpF
Maximum Power Dissipation
40000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SCR76
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Stmicroelectronics STF21N90K5 Datasheet
Download the complete datasheet for Stmicroelectronics STF21N90K5 to view detailed technical specifications.
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