N-channel power MOSFET featuring 600V drain-to-source breakdown voltage and 19.5A continuous drain current. This TO-220FP packaged device offers a low 180mΩ Rds(on) and includes a fast diode. Key switching characteristics include a 21ns turn-on delay and 40ns fall time. Maximum power dissipation is 35W with an operating temperature range of -55°C to 150°C.
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Stmicroelectronics STF23NM60ND technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 19.5A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 180mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 16.4mm |
| Input Capacitance | 2.05nF |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 35W |
| Radiation Hardening | No |
| Rds On Max | 180mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | FDmesh™ II |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 90ns |
| Turn-On Delay Time | 21ns |
| Width | 4.6mm |
| RoHS | Compliant |
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