N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 17A continuous drain current. Offers a low 190mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-220-3 package, this device boasts a 30W power dissipation and operates within a -55°C to 150°C temperature range. Key switching characteristics include a 11.5ns turn-on delay and 37ns fall time.
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Stmicroelectronics STF24NM60N technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 190mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 190MR |
| Fall Time | 37ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.4mm |
| Input Capacitance | 1.4nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 30W |
| Radiation Hardening | No |
| Rds On Max | 190mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 73ns |
| Turn-On Delay Time | 11.5ns |
| Width | 4.6mm |
| RoHS | Compliant |
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