N-channel Power MOSFET featuring 800V drain-source voltage and 19.5A continuous drain current. This single element SuperMESH technology transistor operates in enhancement mode with a maximum gate threshold voltage of 5V. Packaged in a TO-220FP (Fullpak) with 3 through-hole pins and a tab, it offers a low drain-source on-resistance of 260mOhm at 10V. Maximum power dissipation is 40W, with an operating temperature range from -55°C to 150°C.
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| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220FP |
| Package Description | Transistor Outline Package Fullpak |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.4(Max) |
| Package Width (mm) | 4.6(Max) |
| Package Height (mm) | 16.4(Max) |
| Seated Plane Height (mm) | 20(Max) |
| Pin Pitch (mm) | 2.7(Max) |
| Package Weight (g) | 2.04 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | SuperMESH |
| Maximum Drain Source Voltage | 800V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 19.5A |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Drain Source Resistance | 260@10VmOhm |
| Typical Gate Charge @ Vgs | 40@10VnC |
| Typical Gate Charge @ 10V | 40nC |
| Typical Input Capacitance @ Vds | 1600@100VpF |
| Maximum Power Dissipation | 40000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | SCR76 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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