N-channel Power MOSFET featuring 600V drain-source voltage and 20A continuous drain current. This through-hole component offers a low 0.135 Ohm typical on-resistance (165mR max) and is housed in a TO-220-3 package. Key switching characteristics include a 13ns turn-on delay and 50ns fall time, with a 1.8nF input capacitance. Maximum power dissipation is rated at 30W, operating within a -55°C to 150°C temperature range.
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STF26NM60N technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
20A
Drain to Source Voltage (Vdss)
600V
Fall Time
50ns
Gate to Source Voltage (Vgs)
25V
Height
16.4mm
Input Capacitance
1.8nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
30W
Mount
Through Hole
Nominal Vgs
3V
Package Quantity
50
Packaging
Rail/Tube
Radiation Hardening
No
Rds On Max
165mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™
Turn-Off Delay Time
85ns
Turn-On Delay Time
13ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF26NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STF26NM60N to view detailed technical specifications.
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