N-channel Power MOSFET uses MDmesh DM2 technology with a fast-recovery body diode for switching applications. It is rated for 600 V drain-source breakdown voltage, 21 A continuous drain current at 25 °C, and 30 W total dissipation in a TO-220FP package. The device has 0.16 Ω maximum on-resistance at 10 V gate drive and includes Zener-protected gate-source protection. It supports high-efficiency converter, bridge topology, and ZVS phase-shift converter designs with low recovery charge and rugged dv/dt performance.
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| FET type | N-channel Power MOSFET |
| Drain-source breakdown voltage | 600 minV |
| Drain-source voltage at maximum junction temperature | 650V |
| Continuous drain current at 25 °C case | 21A |
| Continuous drain current at 100 °C case | 14A |
| Pulsed drain current | 84A |
| Total power dissipation at 25 °C case | 30W |
| Gate-source voltage | ±25V |
| Static drain-source on-resistance | 0.16 maxΩ |
| Gate threshold voltage | 3 to 5V |
| Input capacitance | 1500 typpF |
| Output capacitance | 70 typpF |
| Reverse transfer capacitance | 1.6 typpF |
| Total gate charge | 34 typnC |
| Turn-on delay time | 16 typns |
| Turn-off delay time | 53 typns |
| Source-drain current | 21A |
| Diode forward voltage | 1.6 typV |
| Operating junction temperature | -55 to 150°C |
| Thermal resistance junction-case | 4.2°C/W |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
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