N-channel Power MOSFET featuring 620V drain-source breakdown voltage and 3.6 Ohm maximum drain-source on-resistance. This component offers a continuous drain current of 2.2A and a maximum power dissipation of 20W. Designed for through-hole mounting in a TO-220-3 package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include an 8ns turn-on delay and a 22ns fall time.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power20W
Quick Jump:
Technical Specifications
Stmicroelectronics STF2N62K3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
2.2A
Drain to Source Breakdown Voltage
620V
Drain to Source Resistance
3.6R
Drain to Source Voltage (Vdss)
620V
Drain-source On Resistance-Max
3.6R
Fall Time
22ns
Gate to Source Voltage (Vgs)
30V
Height
16.4mm
Input Capacitance
340pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
20W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
20W
Radiation Hardening
No
Rds On Max
3.6R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH3™
Threshold Voltage
3.75V
Turn-Off Delay Time
21ns
Turn-On Delay Time
8ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF2N62K3 Datasheet
Download the complete datasheet for Stmicroelectronics STF2N62K3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
