N-channel power MOSFET featuring 950V drain-to-source breakdown voltage and 2A continuous drain current. Offers a typical 4.2 Ohm drain-to-source resistance (Rds On Max 5 Ohm) and a 20W maximum power dissipation. Designed for through-hole mounting in a TO-220FP package, this component boasts fast switching characteristics with a 32.5ns fall time, 20.5ns turn-off delay, and 8.5ns turn-on delay. Operating temperature range spans from -55°C to 150°C, with lead-free and RoHS compliant construction.
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| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Breakdown Voltage | 950V |
| Drain to Source Resistance | 4.2R |
| Drain to Source Voltage (Vdss) | 950V |
| Fall Time | 32.5ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.4mm |
| Input Capacitance | 105pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 20W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 5R |
| RoHS Compliant | Yes |
| Series | SuperMESH5™ |
| Turn-Off Delay Time | 20.5ns |
| Turn-On Delay Time | 8.5ns |
| Weight | 0.01164oz |
| Width | 4.6mm |
| RoHS | Compliant |
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