N-channel power MOSFET featuring 950V drain-to-source breakdown voltage and 2A continuous drain current. Offers a typical 4.2 Ohm drain-to-source resistance (Rds On Max 5 Ohm) and a 20W maximum power dissipation. Designed for through-hole mounting in a TO-220FP package, this component boasts fast switching characteristics with a 32.5ns fall time, 20.5ns turn-off delay, and 8.5ns turn-on delay. Operating temperature range spans from -55°C to 150°C, with lead-free and RoHS compliant construction.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STF2N95K5 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
2A
Drain to Source Breakdown Voltage
950V
Drain to Source Resistance
4.2R
Drain to Source Voltage (Vdss)
950V
Fall Time
32.5ns
Gate to Source Voltage (Vgs)
30V
Height
16.4mm
Input Capacitance
105pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
20W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
5R
RoHS Compliant
Yes
Series
SuperMESH5™
Turn-Off Delay Time
20.5ns
Turn-On Delay Time
8.5ns
Weight
0.01164oz
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF2N95K5 Datasheet
Download the complete datasheet for Stmicroelectronics STF2N95K5 to view detailed technical specifications.
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