N-channel power MOSFET featuring 650V drain-source breakdown voltage and 24A continuous drain current. Offers a low 119mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-220-3 package, with a maximum power dissipation of 35W. Includes fast switching characteristics with a 16ns fall time and 53ns turn-on/off delay times. RoHS compliant and operates within a -55°C to 150°C temperature range.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power35W
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Technical Specifications
Stmicroelectronics STF32N65M5 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 119mR |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 119MR |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 16.4mm |
| Input Capacitance | 3.32nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 35W |
| Radiation Hardening | No |
| Rds On Max | 119mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
| Turn-Off Delay Time | 53ns |
| Turn-On Delay Time | 53ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STF32N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STF32N65M5 to view detailed technical specifications.
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