N-channel power MOSFET featuring 650V drain-source breakdown voltage and 24A continuous drain current. Offers a low 119mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-220-3 package, with a maximum power dissipation of 35W. Includes fast switching characteristics with a 16ns fall time and 53ns turn-on/off delay times. RoHS compliant and operates within a -55°C to 150°C temperature range.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power35W
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Technical Specifications
Stmicroelectronics STF32N65M5 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
24A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
119mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
119MR
Fall Time
16ns
Gate to Source Voltage (Vgs)
25V
Height
16.4mm
Input Capacitance
3.32nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
35W
Mount
Through Hole
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
35W
Radiation Hardening
No
Rds On Max
119mR
RoHS Compliant
Yes
Series
MDmesh™ V
Turn-Off Delay Time
53ns
Turn-On Delay Time
53ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF32N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STF32N65M5 to view detailed technical specifications.
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