N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 26A continuous drain current. Offers a low 0.108 Ohm typical drain-source resistance, with a maximum of 125mR. Designed for through-hole mounting in a TO-220FP package, this component boasts fast switching speeds with a 16ns turn-on delay and 9ns fall time. Maximum power dissipation is 35W, operating across a wide temperature range from -55°C to 150°C.
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Stmicroelectronics STF33N60M2 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 26A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 108mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 16.4mm |
| Input Capacitance | 1.781nF |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 125mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II Plus |
| Turn-Off Delay Time | 109ns |
| Turn-On Delay Time | 16ns |
| Weight | 0.01164oz |
| Width | 4.6mm |
| RoHS | Compliant |
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