N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 26A continuous drain current. Offers a low 0.108 Ohm typical drain-source resistance, with a maximum of 125mR. Designed for through-hole mounting in a TO-220FP package, this component boasts fast switching speeds with a 16ns turn-on delay and 9ns fall time. Maximum power dissipation is 35W, operating across a wide temperature range from -55°C to 150°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Stmicroelectronics STF33N60M2 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
26A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
108mR
Drain to Source Voltage (Vdss)
600V
Fall Time
9ns
Gate to Source Voltage (Vgs)
25V
Height
16.4mm
Input Capacitance
1.781nF
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
35W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
125mR
RoHS Compliant
Yes
Series
MDmesh™ II Plus
Turn-Off Delay Time
109ns
Turn-On Delay Time
16ns
Weight
0.01164oz
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF33N60M2 Datasheet
Download the complete datasheet for Stmicroelectronics STF33N60M2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.