N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 30A continuous drain current. This through-hole component offers a low 95mΩ maximum drain-source on-resistance and a 35W power dissipation. Designed with a TO-220FP package, it exhibits a typical fall time of 9ns and turn-on/off delay times of 66ns. Operating across a wide temperature range of -55°C to 150°C, this RoHS compliant device is suitable for demanding applications.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Stmicroelectronics STF38N65M5 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 95mR |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 95mR |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 16.4mm |
| Input Capacitance | 3nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 35W |
| Radiation Hardening | No |
| Rds On Max | 95mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
| Turn-Off Delay Time | 66ns |
| Turn-On Delay Time | 66ns |
| Width | 4.6mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STF38N65M5 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
