N-channel SuperMESH™ Power MOSFET featuring 1000V drain-source breakdown voltage and 2.5A continuous drain current. This through-hole component offers a low 5.4 Ohm typical drain-source on-resistance and 25W power dissipation. Operating across a wide temperature range of -55°C to 150°C, it is housed in a TO-220FP package. Key switching characteristics include a 15ns turn-on delay and 32ns fall time.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power25W
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Technical Specifications
Stmicroelectronics STF3NK100Z technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
2.5A
Drain to Source Breakdown Voltage
1kV
Drain to Source Resistance
6R
Drain to Source Voltage (Vdss)
1kV
Fall Time
32ns
Gate to Source Voltage (Vgs)
30V
Height
16.4mm
Input Capacitance
601pF
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
25W
Radiation Hardening
No
Rds On Max
6R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Threshold Voltage
3.75V
Turn-Off Delay Time
39ns
Turn-On Delay Time
15ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF3NK100Z Datasheet
Download the complete datasheet for Stmicroelectronics STF3NK100Z to view detailed technical specifications.
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