N-channel SuperMESH™ Power MOSFET featuring 800V drain-source breakdown voltage and 2.5A continuous drain current. This through-hole component offers a maximum drain-source on-resistance of 4.5 Ohms and a typical value of 3.8 Ohms. Designed for high voltage applications, it operates within a temperature range of -55°C to 150°C and has a power dissipation of 25W. The MOSFET is housed in a TO-220FP package and exhibits fast switching characteristics with turn-on delay time of 17ns and fall time of 40ns.
PackageTO-220-3
Current Rating2.5A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STF3NK80Z technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
2.5A
Current Rating
2.5A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
4.5R
Drain to Source Voltage (Vdss)
800V
Drain-source On Resistance-Max
4.5R
Fall Time
40ns
Gate to Source Voltage (Vgs)
30V
Height
9.3mm
Input Capacitance
485pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Through Hole
Number of Elements
1
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
25W
Radiation Hardening
No
Rds On Max
4.5R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Threshold Voltage
3.75V
Turn-Off Delay Time
36ns
Turn-On Delay Time
17ns
DC Rated Voltage
800V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF3NK80Z Datasheet
Download the complete datasheet for Stmicroelectronics STF3NK80Z to view detailed technical specifications.
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