
N-channel SuperMESH™ Power MOSFET featuring 800V drain-source breakdown voltage and 2.5A continuous drain current. This through-hole component offers a maximum drain-source on-resistance of 4.5 Ohms and a typical value of 3.8 Ohms. Designed for high voltage applications, it operates within a temperature range of -55°C to 150°C and has a power dissipation of 25W. The MOSFET is housed in a TO-220FP package and exhibits fast switching characteristics with turn-on delay time of 17ns and fall time of 40ns.
Stmicroelectronics STF3NK80Z technical specifications.
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