N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 33A continuous drain current. Offers a low 70mΩ typical drain-source on-resistance. Designed for through-hole mounting in a TO-220FP package, this device boasts fast switching characteristics with a 13ns fall time. Maximum power dissipation is 40W, with operating temperatures ranging from -55°C to 150°C. RoHS compliant and lead-free.
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Stmicroelectronics STF42N65M5 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 33A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 79mR |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 79MR |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 9.3mm |
| Input Capacitance | 4.65nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| Rds On Max | 79mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 61ns |
| Width | 4.6mm |
| RoHS | Compliant |
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