N-channel power MOSFET featuring 525V drain-source breakdown voltage and 2.5A continuous drain current. Offers a maximum drain-source on-resistance of 2.6 ohms. This TO-252 packaged component operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 20W. Includes fast switching characteristics with turn-on delay of 8ns and fall time of 14ns.
PackageDPAK
MountingThrough Hole, Surface Mount
PolarityN-CHANNEL
Power20W
Quick Jump:
Technical Specifications
Stmicroelectronics STF4N52K3 technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
2.5A
Drain to Source Breakdown Voltage
525V
Drain to Source Resistance
2.6R
Drain to Source Voltage (Vdss)
525V
Drain-source On Resistance-Max
2.6R
Fall Time
14ns
Gate to Source Voltage (Vgs)
30V
Height
2.4mm
Input Capacitance
334pF
Lead Free
Lead Free
Length
7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
20W
Mount
Through Hole, Surface Mount
Number of Elements
1
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
20W
Radiation Hardening
No
Rds On Max
2.6R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH3™
Threshold Voltage
3.75V
Turn-Off Delay Time
21ns
Turn-On Delay Time
8ns
Width
6.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF4N52K3 Datasheet
Download the complete datasheet for Stmicroelectronics STF4N52K3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
