N-channel power MOSFET featuring 950V drain-source breakdown voltage and 4A continuous drain current. Offers a low 3 Ohm typical drain-source on-resistance, with a maximum of 3.5 Ohm. Designed for through-hole mounting in a TO-220FP package, this component boasts fast switching speeds with an 18ns fall time. Maximum power dissipation is 25W, and it operates within a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
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| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Breakdown Voltage | 950V |
| Drain to Source Resistance | 3R |
| Drain to Source Voltage (Vdss) | 950V |
| Drain-source On Resistance-Max | 3.5R |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.4mm |
| Input Capacitance | 460pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 25W |
| Radiation Hardening | No |
| Rds On Max | 3.5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH3™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 17ns |
| Width | 4.6mm |
| RoHS | Compliant |
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