N-channel power MOSFET featuring 950V drain-source breakdown voltage and 4A continuous drain current. Offers a low 3 Ohm typical drain-source on-resistance, with a maximum of 3.5 Ohm. Designed for through-hole mounting in a TO-220FP package, this component boasts fast switching speeds with an 18ns fall time. Maximum power dissipation is 25W, and it operates within a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power25W
Quick Jump:
Technical Specifications
Stmicroelectronics STF5N95K3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
4A
Drain to Source Breakdown Voltage
950V
Drain to Source Resistance
3R
Drain to Source Voltage (Vdss)
950V
Drain-source On Resistance-Max
3.5R
Fall Time
18ns
Gate to Source Voltage (Vgs)
30V
Height
16.4mm
Input Capacitance
460pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
25W
Radiation Hardening
No
Rds On Max
3.5R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH3™
Threshold Voltage
4V
Turn-Off Delay Time
32ns
Turn-On Delay Time
17ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF5N95K3 Datasheet
Download the complete datasheet for Stmicroelectronics STF5N95K3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
