N-channel power MOSFET featuring 600V drain-source breakdown voltage and 4.5A continuous drain current. This through-hole component offers a low 1.06 Ohm typical drain-source resistance and is housed in a TO-220FP package. Key switching characteristics include a 9.5ns turn-on delay and 22.5ns fall time. Maximum power dissipation is 20W, with an operating temperature range of -55°C to 150°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STF6N60M2 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
4.5A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
1.06R
Drain to Source Voltage (Vdss)
600V
Fall Time
22.5ns
Gate to Source Voltage (Vgs)
25V
Height
16.4mm
Input Capacitance
232pF
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
20W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
1.2R
RoHS Compliant
Yes
Series
MDmesh™ II Plus
Turn-Off Delay Time
24ns
Turn-On Delay Time
9.5ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF6N60M2 Datasheet
Download the complete datasheet for Stmicroelectronics STF6N60M2 to view detailed technical specifications.
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