N-channel power MOSFET featuring 600V drain-source breakdown voltage and 4.5A continuous drain current. This through-hole component offers a low 1.06 Ohm typical drain-source resistance and is housed in a TO-220FP package. Key switching characteristics include a 9.5ns turn-on delay and 22.5ns fall time. Maximum power dissipation is 20W, with an operating temperature range of -55°C to 150°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STF6N60M2 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 1.06R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 22.5ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 16.4mm |
| Input Capacitance | 232pF |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 20W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1.2R |
| RoHS Compliant | Yes |
| Series | MDmesh™ II Plus |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 9.5ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STF6N60M2 Datasheet
Download the complete datasheet for Stmicroelectronics STF6N60M2 to view detailed technical specifications.
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