N-channel SuperMESH3™ Power MOSFET, 620V drain-source breakdown voltage, 5.5A continuous drain current, and 1.28 Ohm Rds(on) max. Features include 19ns fall time, 22ns turn-on delay, and 49ns turn-off delay. Operates within a -55°C to 150°C temperature range with 30W max power dissipation. Packaged in a TO-220FP through-hole mount, this RoHS compliant component offers 875pF input capacitance and a 3.75V threshold voltage.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power90W
Quick Jump:
Technical Specifications
Stmicroelectronics STF6N62K3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
5.5A
Drain to Source Breakdown Voltage
620V
Drain to Source Resistance
1.28R
Drain to Source Voltage (Vdss)
620V
Fall Time
19ns
Gate to Source Voltage (Vgs)
30V
Height
16.4mm
Input Capacitance
875pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
30W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
90W
Radiation Hardening
No
Rds On Max
1.28R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Threshold Voltage
3.75V
Turn-Off Delay Time
49ns
Turn-On Delay Time
22ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF6N62K3 Datasheet
Download the complete datasheet for Stmicroelectronics STF6N62K3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
