N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 5.4A continuous drain current. Offers a low 1.1 Ohm typical drain-source on-resistance. Designed for through-hole mounting in a TO-220-3 package, this component boasts a maximum power dissipation of 30W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 14ns turn-on delay and a 22ns fall time.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power30W
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Technical Specifications
Stmicroelectronics STF6N65K3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
5.4A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
1.3R
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
1.3R
Fall Time
22ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
880pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
30W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
30W
Radiation Hardening
No
Rds On Max
1.3R
RoHS Compliant
Yes
Series
SuperMESH3™
Turn-Off Delay Time
54ns
Turn-On Delay Time
14ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF6N65K3 Datasheet
Download the complete datasheet for Stmicroelectronics STF6N65K3 to view detailed technical specifications.
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