N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 5.4A continuous drain current. Offers a low 1.1 Ohm typical drain-source on-resistance. Designed for through-hole mounting in a TO-220-3 package, this component boasts a maximum power dissipation of 30W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 14ns turn-on delay and a 22ns fall time.
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Stmicroelectronics STF6N65K3 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 5.4A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 1.3R |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 1.3R |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 880pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 30W |
| Radiation Hardening | No |
| Rds On Max | 1.3R |
| RoHS Compliant | Yes |
| Series | SuperMESH3™ |
| Turn-Off Delay Time | 54ns |
| Turn-On Delay Time | 14ns |
| RoHS | Compliant |
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