N-channel SuperMESH3™ Power MOSFET in TO-220-3 package. Features 525V drain-to-source breakdown voltage and 6A continuous drain current. Offers 850mΩ drain-to-source resistance at a nominal Vgs of 3.75V. Includes fast switching characteristics with turn-on delay of 13ns and fall time of 19ns. Maximum power dissipation is 25W, operating temperature range from -55°C to 150°C. RoHS compliant and lead-free.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power25W
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Technical Specifications
Stmicroelectronics STF7N52K3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
6A
Drain to Source Breakdown Voltage
525V
Drain to Source Resistance
850mR
Drain to Source Voltage (Vdss)
525V
Fall Time
19ns
Gate to Source Voltage (Vgs)
30V
Height
16.4mm
Input Capacitance
870pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Through Hole
Nominal Vgs
3.75V
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
25W
Radiation Hardening
No
Rds On Max
850mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH3™
Turn-Off Delay Time
36ns
Turn-On Delay Time
13ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF7N52K3 Datasheet
Download the complete datasheet for Stmicroelectronics STF7N52K3 to view detailed technical specifications.
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