N-channel Power MOSFET featuring 600V drain-to-source breakdown voltage and 5A continuous drain current. This through-hole component offers a low 0.86 Ohm typical drain-to-source resistance, with a maximum of 950mR. Housed in a TO-220FP package, it operates across a wide temperature range from -55°C to 150°C and supports a maximum power dissipation of 20W. Key switching characteristics include a 7.6ns turn-on delay, 15.9ns fall time, and 19.3ns turn-off delay.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STF7N60M2 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
5A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
860mR
Drain to Source Voltage (Vdss)
600V
Fall Time
15.9ns
Gate to Source Voltage (Vgs)
25V
Height
16.4mm
Input Capacitance
271pF
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
20W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
950mR
RoHS Compliant
Yes
Series
MDmesh™ II Plus
Turn-Off Delay Time
19.3ns
Turn-On Delay Time
7.6ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF7N60M2 Datasheet
Download the complete datasheet for Stmicroelectronics STF7N60M2 to view detailed technical specifications.
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