N-channel Power MOSFET featuring 600V drain-to-source breakdown voltage and 5A continuous drain current. This through-hole component offers a low 0.86 Ohm typical drain-to-source resistance, with a maximum of 950mR. Housed in a TO-220FP package, it operates across a wide temperature range from -55°C to 150°C and supports a maximum power dissipation of 20W. Key switching characteristics include a 7.6ns turn-on delay, 15.9ns fall time, and 19.3ns turn-off delay.
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Stmicroelectronics STF7N60M2 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 860mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 15.9ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 16.4mm |
| Input Capacitance | 271pF |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 20W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 950mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II Plus |
| Turn-Off Delay Time | 19.3ns |
| Turn-On Delay Time | 7.6ns |
| Width | 4.6mm |
| RoHS | Compliant |
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