PNP Silicon Bipolar Junction Transistor, 80V Collector-Emitter Voltage, 1.5A Max Collector Current, 500mV Collector-Emitter Saturation Voltage, and 50MHz Transition Frequency. This power transistor features a minimum DC current gain (hFE) of 140 and a maximum power dissipation of 1.4W. Packaged in a SOT-89, 4-pin surface mount configuration, it operates from -65°C to 150°C and is RoHS compliant.
Frequency50MHz
PackageSOT-89
Current Rating-3A
MountingSurface Mount
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Technical Specifications
Stmicroelectronics STF817A technical specifications.
General
Package/Case
SOT-89
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
500mV
Current Rating
-3A
Emitter Base Voltage (VEBO)
5V
Gain Bandwidth Product
50MHz
Height
1.6mm
hFE Min
140
Lead Free
Lead Free
Length
4.6mm
Max Breakdown Voltage
80V
Max Collector Current
1.5A
Max Frequency
50MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1.4W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
PNP
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
50MHz
DC Rated Voltage
-30V
Width
2.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF817A Datasheet
Download the complete datasheet for Stmicroelectronics STF817A to view detailed technical specifications.
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