N-channel Power MOSFET featuring 650V drain-source voltage and 7A continuous drain current. This single-element silicon MOSFET utilizes MDmesh process technology and offers a low 600mOhm drain-source resistance at 10V. Packaged in a 3-pin TO-220FP (Fullpak) with through-hole mounting, it has a maximum power dissipation of 25W and operates from -55°C to 150°C.
PackageTO-220FP
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STF8N65M5 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220FP |
| Package Description | Transistor Outline Package Fullpak |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.4(Max) |
| Package Width (mm) | 4.6(Max) |
| Package Height (mm) | 16.4(Max) |
| Seated Plane Height (mm) | 20(Max) |
| Pin Pitch (mm) | 2.7(Max) |
| Package Weight (g) | 2.04 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | MDmesh |
| Maximum Drain Source Voltage | 650V |
| Maximum Gate Source Voltage | ±25V |
| Maximum Continuous Drain Current | 7A |
| Material | Si |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Drain Source Resistance | 600@10VmOhm |
| Typical Gate Charge @ Vgs | 15@10VnC |
| Typical Gate Charge @ 10V | 15nC |
| Typical Input Capacitance @ Vds | 690@100VpF |
| Maximum Power Dissipation | 25000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SCR76 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Stmicroelectronics STF8N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STF8N65M5 to view detailed technical specifications.
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