N-channel Power MOSFET featuring 650V drain-source voltage and 7A continuous drain current. This single-element silicon MOSFET utilizes MDmesh process technology and offers a low 600mOhm drain-source resistance at 10V. Packaged in a 3-pin TO-220FP (Fullpak) with through-hole mounting, it has a maximum power dissipation of 25W and operates from -55°C to 150°C.
PackageTO-220FP
MountingThrough Hole
Quick Jump:
Technical Specifications
Stmicroelectronics STF8N65M5 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220FP
Package Description
Transistor Outline Package Fullpak
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.4(Max)
Package Width (mm)
4.6(Max)
Package Height (mm)
16.4(Max)
Seated Plane Height (mm)
20(Max)
Pin Pitch (mm)
2.7(Max)
Package Weight (g)
2.04
Package Material
Plastic
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
MDmesh
Maximum Drain Source Voltage
650V
Maximum Gate Source Voltage
±25V
Maximum Continuous Drain Current
7A
Material
Si
Maximum Gate Threshold Voltage
5V
Maximum Drain Source Resistance
600@10VmOhm
Typical Gate Charge @ Vgs
15@10VnC
Typical Gate Charge @ 10V
15nC
Typical Input Capacitance @ Vds
690@100VpF
Maximum Power Dissipation
25000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SCR76
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Stmicroelectronics STF8N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STF8N65M5 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.