
N-channel SuperMESH™ Power MOSFET featuring 1000V drain-source breakdown voltage and 6.5A continuous drain current. This through-hole component offers a low 1.6 Ohm typical drain-source on-resistance and a maximum of 1.85 Ohm. Operating across a wide temperature range from -55°C to 150°C, it has a maximum power dissipation of 40W and is housed in a TO-220-3 package. Key switching characteristics include a 28ns turn-on delay and 30ns fall time.
Stmicroelectronics STF8NK100Z technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 6.5A |
| Current Rating | 6.5A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 1.6R |
| Drain to Source Voltage (Vdss) | 1kV |
| Drain-source On Resistance-Max | 1.85R |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.4mm |
| Input Capacitance | 2.18nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| Rds On Max | 1.85R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Threshold Voltage | 3.75V |
| Turn-Off Delay Time | 59ns |
| Turn-On Delay Time | 28ns |
| DC Rated Voltage | 1kV |
| Width | 4.6mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STF8NK100Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
