N-channel power MOSFET featuring 500V drain-source breakdown voltage and 5A continuous drain current. Offers a low 790mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-220-3 package, this component boasts fast switching speeds with a 7ns turn-on delay and 8.8ns fall time. Maximum power dissipation is rated at 20W, with an operating temperature range of -55°C to 150°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power20W
Quick Jump:
Technical Specifications
Stmicroelectronics STF8NM50N technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
5A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
790mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
790MR
Fall Time
8.8ns
Gate to Source Voltage (Vgs)
25V
Height
16.4mm
Input Capacitance
364pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
20W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
20W
Radiation Hardening
No
Rds On Max
790mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™
Threshold Voltage
3V
Turn-Off Delay Time
25ns
Turn-On Delay Time
7ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF8NM50N Datasheet
Download the complete datasheet for Stmicroelectronics STF8NM50N to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
