N-channel Power MOSFET featuring 600V drain-source voltage and 5.5A continuous drain current. Offers low 0.72 Ohm typical drain-source resistance and 780mR maximum Rds On. Designed for through-hole mounting in a TO-220FP package, this device boasts fast switching speeds with turn-on delay of 8.8ns and fall time of 13.5ns. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 20W. RoHS compliant and lead-free.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STF9N60M2 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
5.5A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
780mR
Drain to Source Voltage (Vdss)
600V
Fall Time
13.5ns
Gate to Source Voltage (Vgs)
25V
Height
16.4mm
Input Capacitance
320pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
20W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
780mR
RoHS Compliant
Yes
Series
MDmesh™ II Plus
Turn-Off Delay Time
22ns
Turn-On Delay Time
8.8ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF9N60M2 Datasheet
Download the complete datasheet for Stmicroelectronics STF9N60M2 to view detailed technical specifications.
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