N-channel Power MOSFET featuring 600V drain-source voltage and 5.5A continuous drain current. Offers low 0.72 Ohm typical drain-source resistance and 780mR maximum Rds On. Designed for through-hole mounting in a TO-220FP package, this device boasts fast switching speeds with turn-on delay of 8.8ns and fall time of 13.5ns. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 20W. RoHS compliant and lead-free.
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Stmicroelectronics STF9N60M2 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 5.5A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 780mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 13.5ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 16.4mm |
| Input Capacitance | 320pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 20W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 780mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II Plus |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 8.8ns |
| Width | 4.6mm |
| RoHS | Compliant |
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