N-CHANNEL POWER MOSFET featuring 800V drain-to-source breakdown voltage and 7.5A continuous drain current. This through-hole component offers a low 1.2 ohm Rds On resistance and 150W power dissipation. Ideal for high-voltage applications, it operates across a -55°C to 150°C temperature range and is available in TO-220AB and TO-220FP packages. Key switching characteristics include a 26ns turn-on delay and 18ns fall time.
PackageTO-220-3
Current Rating7.5A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STF9NK80Z technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 7.5A |
| Current Rating | 7.5A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.9nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35W |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 1.2R |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Turn-Off Delay Time | 58ns |
| Turn-On Delay Time | 26ns |
| DC Rated Voltage | 800V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STF9NK80Z Datasheet
Download the complete datasheet for Stmicroelectronics STF9NK80Z to view detailed technical specifications.
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