N-CHANNEL POWER MOSFET featuring 800V drain-to-source breakdown voltage and 7.5A continuous drain current. This through-hole component offers a low 1.2 ohm Rds On resistance and 150W power dissipation. Ideal for high-voltage applications, it operates across a -55°C to 150°C temperature range and is available in TO-220AB and TO-220FP packages. Key switching characteristics include a 26ns turn-on delay and 18ns fall time.
PackageTO-220-3
Current Rating7.5A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STF9NK80Z technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
7.5A
Current Rating
7.5A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
1.2R
Drain to Source Voltage (Vdss)
800V
Fall Time
18ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
1.9nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
35W
Mount
Through Hole
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
150W
Radiation Hardening
No
Rds On Max
1.2R
RoHS Compliant
Yes
Series
SuperMESH™
Turn-Off Delay Time
58ns
Turn-On Delay Time
26ns
DC Rated Voltage
800V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF9NK80Z Datasheet
Download the complete datasheet for Stmicroelectronics STF9NK80Z to view detailed technical specifications.
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